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SKW30N60HS
^
High Speed IGBT in NPT-technology
C
* 30% lower Eoff compared to previous generation * Short circuit withstand time - 10 s * Designed for operation above 30 kHz * NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution * * High ruggedness, temperature stable behaviour Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V IC 30 Eoff) 480J Tj 150C Package TO-247AC Ordering Code Q67040-S4503
P-TO-247-3-1 (TO-247AC)
G
E
Type SKW30N60HS Maximum Ratings Parameter
Symbol VCE IC
Value 600 41 30
Unit V A
Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage static transient (tp<1s, D<0.05) Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1)
ICpul s IF
112 112
41 28 IFpul s VGE tSC Ptot Tj , Tstg Tj(tl) 112 20 30 10 250 -55...+150 175 260 V s W C
VGE = 15V, VCC 600V, Tj 150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
^ Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 5 00 A VCE(sat) V G E = 15 V , I C = 30 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 3 0 A T j =2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 70 0 A , V C E = V G E V C E = 60 0 V, V G E = 0 V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance IGES gfs V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 30 A 20 40 3000 100 nA S 3 1.55 1.55 4 2.05 2.05 5 A 2.8 3.5 3.15 4.00 600 V Symbol Conditions Value min. Typ. max. Unit RthJA TO-247AC 40 RthJCD 1.29 RthJC 0.5 K/W Symbol Conditions Max. Value Unit
Power Semiconductors
2
Rev. 2 Aug-02
SKW30N60HS
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Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
Ciss Coss Crss QGate LE IC(SC)
V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 48 0 V, I C =3 0 A V G E = 15 V T O - 24 7A C V G E = 15 V ,t S C 10 s V C C 6 0 0 V, T j 15 0 C
-
1500 203 92 141 13 220
pF
nC nH A
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =2 5 C , V R = 4 00 V , I F = 3 0 A, d i F / d t =1 1 00 A / s 125 20 105 0.82 17 580 C A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 40 0 V, I C = 3 0 A, V G E = 0/ 15 V , R G = 11 2) L = 60 n H, 2) C = 40 pF Energy losses include "tail" and diode reverse recovery. 20 21 250 25 0.60 0.55 1.15 mJ ns Symbol Conditions Value min. typ. max. Unit
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L an d Stray capacity C due to test circuit in Figure E. 3 Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
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Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm d i r r /d t T j =1 5 0 C V R = 4 00 V , I F = 3 0 A, d i F / d t =1 2 50 A / s 190 30 160 2.0 24 480 C A A/s ns td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C V C C = 40 0 V, I C = 3 0 A, V G E = 0/ 15 V , R G = 1 .8 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. T j =1 5 0 C V C C = 40 0 V, I C = 3 0 A, V G E = 0/ 15 V , R G = 1 1 1) L = 60 n H, 1) C = 40 pF Energy losses include "tail" and diode reverse recovery. 16 13 122 29 0.78 0.48 1.26 20 19 274 27 0.91 0.70 1.61 mJ ns mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L an d Stray capacity C due to test circuit in Figure E. 4 Rev. 2 Aug-02
Power Semiconductors
SKW30N60HS
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100A
100A
tP=4s 15s
IC, COLLECTOR CURRENT
80A
IC, COLLECTOR CURRENT
T C=80C
10A
50s 200s 1ms
60A
T C=110C
40A
Ic
1A
20A
Ic
10Hz 100Hz 1kHz 10kHz 100kHz
DC 0,1A 1V
0A
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 11)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C; VGE=15V)
Limited by Bond wire
40A
200W
IC, COLLECTOR CURRENT
50C 7 5 C 1 0 0 C 125C
Ptot, POWER DISSIPATION
30A
150W
100W
20A
50W
10A
0W 2 5 C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
5
Rev. 2 Aug-02
SKW30N60HS
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80A 70A 60A 50A 40A 30A 20A 10A 0A 0V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
V GE=20V 15V 13V 11V 9V 7V 5V
80A 70A 60A 50A 40A 30A 20A 10A
2V 4V 6V
VGE=20V 15V 13V 11V 9V 7V 5V
0A
0V
2V
4V
6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
5,5V 5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C 150C I C =15A I C =30A I C =60A
80A
T J = -5 5 C 25C 150C
IC, COLLECTOR CURRENT
60A
40A
20A
0A 0V
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev. 2 Aug-02
SKW30N60HS
^
td(off)
t, SWITCHING TIMES
100ns
t, SWITCHING TIMES
100 ns
td(off)
tf
tf
td(on) tr 10ns 0A 10A 20A 30A 40A 50A
10 ns td(on) tr
0 5 10 15 20 25
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=11, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
5,5V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
td(off)
5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C min. 150C typ. max.
t, SWITCHING TIMES
100ns
tf tr td(on) 10ns 0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=30A, RG=11, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.7mA)
Power Semiconductors
7
Rev. 2 Aug-02
SKW30N60HS
^
5,0mJ *) Eon and E ts include losses due to diode recovery
3,0 mJ
*) Eon and Ets include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
4,0mJ
E, SWITCHING ENERGY LOSSES
2,5 mJ 2,0 mJ 1,5 mJ 1,0 mJ 0,5 mJ Eoff
3,0mJ Eon* 2,0mJ
Ets* Eon*
1,0mJ
Eoff
0,0mJ 0A 10A 20A 30A 40A 50A 60A
0,0 mJ
0
5
10
15
20
25
30
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=400V, VGE=0/15V, RG=11, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=400V, VGE=0/15V, IC=30A, Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
*) Eon and Ets include losses due to diode recovery
D=0.5 10 K/W
-1
E, SWITCHING ENERGY LOSSES
1,5mJ
Ets*
0.2 0.1 0.05
1,0mJ
Eon*
10 K/W
-2
0.02
0.01 10 K/W
-3
0,5mJ
Eoff
R,(K/W) 0.39 0.403 0.2972 0.1098
R1
, (s) 0.0981 1.71*10-2 1.04*10-3 1.37*10-4
R2
single pulse 10 K/W 1s
-4
0,0mJ 0C 50C 100C 150C
C 1 = 1 / R 1 C 2 = 2 /R 2
10s
100s
1ms
10ms 100ms
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=30A, RG=11, Dynamic test circuit in Figure E)
tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T)
Power Semiconductors
8
Rev. 2 Aug-02
SKW30N60HS
^
VGE, GATE-EMITTER VOLTAGE
1nF
15V
Ciss
120V 10V
480V
c, CAPACITANCE
Coss 100pF Crss
5V
0V 0nC
50nC
100nC
150nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
tSC, SHORT CIRCUIT WITHSTAND TIME
300A 250A 200A 150A 100A 50A 0A 10V
15s
10s
5s
0s 10V 11V 12V 13V 14V
12V
14V
16V
18V
VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C)
Power Semiconductors
9
Rev. 2 Aug-02
SKW30N60HS
^
500ns 450ns
2,8C
Qrr, REVERSE RECOVERY CHARGE
IF=60A IF=30A
2,6C 2,4C 2,2C 2,0C 1,8C 1,6C 1,4C 1,2C I F=15A 250A/s 500A/s 750A/s IF =60A
trr, REVERSE RECOVERY TIME
400ns 350ns
300ns IF=15A 250ns 200ns 150ns 100ns 0A/s
IF =30A
250A/s 500A/s 750A/s
1,0C 0A/s
diF/dt, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
24A 20A 16A 12A 8A 4A 0A
IF=30A
IF=60A
-400A/s
-300A/s
IF=15A
-200A/s
-100A/s
200A/s 400A/s 600A/s 800A/s diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
-0A/s 200A/s
400A/s
600A/s
800A/s
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, TJ=150C, Dynamic test circuit in Figure E)
Power Semiconductors
10
Rev. 2 Aug-02
SKW30N60HS
^
TJ=-55C 50A 25C 150C
IF=60A 2,0
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
40A
IF=30A 1,5 IF=15A 1,0
30A
20A
0,5
10A
0A
0,0
0,0V 0,5V 1,0V 1,5V 2,0V
-50
0
50
100
150
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W D=0.5 0.2 0.1 10 K/W 0.05 0.02 0.01 10 K/W
-2 -1
0
R,(K/W) 0.358 0.367 0.329 0.216 0.024
R1
, (s)= 9.02*10-2 9.42*10-3 9.93*10-4 1.19*10-4 1.92*10-5
R2
single pulse 10 K/W 1s
-3
C 1= 1/R 1
C 2 = 2 /R 2
10s
100s
1m s
10m s 100m s
tP, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
11
Rev. 2 Aug-02
SKW30N60HS
^
TO-247AC
symbol
dimensions
[mm] min max 5.28 2.51 2.29 1.32 2.06 3.18 21.16 16.15 5.72 20.68 4.930 6.22 min 4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 6.12
[inch] max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409
A B C D E F G H K L M N
P
0.76 max
0.0299 max
3.61
0.1421
Q
Power Semiconductors
12
Rev. 2 Aug-02
SKW30N60HS
^
i,v diF /dt tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =60nH an d Stray capacity C =40pF.
Power Semiconductors
13
Rev. 2 Aug-02
SKW30N60HS
^
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
14
Rev. 2 Aug-02

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